jbe.rn.i~condii.ctot l/^ioducti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA1327 description ? low collector saturation voltage- : vce silicon pnp power transistor 2SA1327 electrical characteristics tj=25c unless otherwise specified symbol v(br)ceo vce(sat) vse(on) icbo iebo hpe-1 hpe-2 fr cob parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc=-10ma; ib= 0 lc= -8a; ib= -0.4a lc= -8a; voe= -2v vcb= -50v; le= 0 veb= -8v; lc= 0 lc= -1a; vce= -2v lc= -8a; vce= -2v lc=-1a;vce=-2v le=0;vcb=-10v;f=1mhz min -20 100 70 typ. 45 400 max -0.5 -1.5 -1.0 -1.0 320 unit v v v ma ma mhz pf ? hpe-1 classifications 0 100-200 y 160-320
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